Thin-film transistor formed on insulating substrate
US7309900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2005 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Jun 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
Abstract
There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.