Microelectromechanical systems contact stress sensor
US7311009B2 · kind B2 · utility
40Cited by
14References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Aug 10, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microelectromechanical systems stress sensor comprising a microelectromechanical systems silicon body. A recess is formed in the silicon body. A silicon element extends into the recess. The silicon element has limited freedom of movement within the recess. An electrical circuit in the silicon element includes a piezoresistor material that allows for sensing changes in resistance that is proportional to bending of the silicon element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.