Localized synthesis and self-assembly of nanostructures
US7311776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2004 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Nov 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano-to micro-integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.