Semiconductor device
US7312684B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 15, 2006 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Dec 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a thin-film inductor element which is formed on the insulating film, and which includes first and second terminals and a conductive layer formed into a spiral shape between the first and second terminals so as to have a plurality of turns and at least one intersection. The conductive layer includes (i) a first conductor layer formed on the semiconductor substrate, and (ii) a second conductor layer which is formed on the insulating film, intersects the first conductor layer via the insulating film at the intersection. The thin-film inductor element has an arrangement in which the first and second conductor layers are symmetrically arranged in directions from an intermediate point between the first and second terminals along the longitudinal direction of the conductive layer to the first and second terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.