Method for in situ monitoring of chamber peeling
US7312865B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2004 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Nov 27, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/68
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition. The method includes the steps of: exciting the particles to emit light; and comparing an intensity value of the light, measured at a selected time during a predetermined time period, to a predetermined light intensity threshold value. If the intensity value of the light measured at the selected time is above the predetermined light intensity threshold value, the chamber condition is abnormal. If the intensity value of the light is equal to or below the predetermined light intensity threshold value, the chamber condition is normal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.