High-temperature pressure sensor
US7313965B2 · kind B2 · utility
3Cited by
12References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2006 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Aug 25, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/0681
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.