Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
US7314518B2 · kind B2 · utility
1Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Jan 13, 2005 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal growth furnace for a compound semiconductor single crystal has: a small diameter section for placing a seed crystal therein; an increasing diameter section that has diameters to increase from the small diameter section to upward; and a constant diameter section that extends from the increasing diameter section to upward. The increasing diameter section has an angle of 120 degrees or more and less than 160 degrees between inner walls opposed to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.