Semiconductor device having a surface conducting channel and method of forming
US7314801B2 · kind B2 · utility
9Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Dec 20, 2005 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | May 15, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y30/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device including a metal oxide layer, a channel area of the metal oxide layer, a preservation layer formed on the channel area of the metal oxide layer, and at least two channel contacts coupled to the channel area of the metal oxide layer, and a method of forming the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.