Method for manufacturing a solid-state image sensing device, such as a CCD
US7316937B2 · kind B2 · utility
7Cited by
12References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2004 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Jul 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
Light detecting elements are formed in areas marked off by scribe lines on a semiconductor substrate, and color filters are deposited in such a manner as to cover the formed areas of the light detecting elements, and then an infrared cut-off filter, on which an infrared reflecting film is vapor-deposited in such a manner as to cover the formed areas of the light detecting elements, is firmly fixed to the surface of the semiconductor substrate through the interposition of a translucent resin layer, such as an epoxy adhesive, to thereby form a multilayered structure, and this multilayered structure is diced along scribe lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.