Patent · US Expired

Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip

US7317202B2 · kind B2 · utility

1Cited by

7References

11Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Alexander Behres · Pfatter, DE
Norbert Linder · Wenzenbach, DE
Bernd Mayer · Graz, AT

Key dates

Filing date	Sep 28, 2004
Grant date	Jan 8, 2008
Priority date	—
Expiry date	Sep 28, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/013
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.