Self light-emitting device
US7317282B2 · kind B2 · utility
36Cited by
17References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2004 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Dec 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.