Low resistance T-shaped ridge structure
US7319076B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Jan 15, 2008 |
| Priority date | — |
| Expiry date | Oct 25, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge section is defined in the overgrowth layer and portions of the sacrificial layer are removed to define a shank section in the overgrowth layer under the ridge section. The ridge section having a greater lateral dimension than the shank section to reduce electrical resistance between the active layer and electrical interconnects to be electrically coupled to the ridge section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.