Semiconductor probe with resistive tip and method of fabricating the same
US7319224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2005 |
| Grant date | Jan 15, 2008 |
| Priority date | — |
| Expiry date | Mar 14, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/879
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask la…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.