Light emitting-diode chip and a method for producing same

US7319247B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Stefan Bader · Fort Collins, US
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE
• Hans-Jürgen Lugauer · Sinzing, DE
• Manfred Mundbrod-Vangerow · Oxenbronn, DE

Key dates

• Filing date: Mar 16, 2001
• Grant date: Jan 15, 2008
• Expiry date: Mar 16, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only. The p-type epitaxial layer (5) is provided on substantially the full area of the main surface (9) facing away from the n-conductive epitaxial layer (4) with a reflective, bondable p-contact layer (6), and the n-conductive epitaxial layer (4) is provided on its main surface facing away from the p-conductive epitaxial layer (5) with an n-contact layer (7) that covers only a portion of said main surface (8). The decoupling of light from the chip (1) takes place via the bare region of the main surface (8) of the n-conductive epitaxial layer (4) and via the chip sides (14).