Method and structure for buried circuits and devices
US7320918B2 · kind B2 · utility
9Cited by
39References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2005 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Apr 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.