Integrated circuit and method for manufacturing an integrated circuit on a semiconductor chip
US7320922B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 15, 2005 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Dec 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/643
Abstract
An integrated circuit on a semiconductor chip is provided with a first bipolar transistor and a second bipolar transistor. The first bipolar transistor has a first collector region of a first conductivity type, grown by at least one epitaxial layer, and the second bipolar transistor has a second collector region of this first conductivity type grown by this epitaxial layer. The first collector region also has a first collector drift zone, and the second collector region has a second collector drift zone. Whereby, the first collector drift zone is shortened as compared to the second collector drift zone by partial etching of the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.