CoSb3-based thermoelectric device fabrication method

US7321157B2 · kind B2 · utility

Assignees

• GM GLOBAL TECHNOLOGY OPERATIONS LLC · US
• DALIAN INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Lidong Chen · Shanghai, CN
• Junfeng Fan · Xiamen, CN
• Shengqiang Bai · Shanghai, CN
• Jihui Yang · Liaocheng, CN

Key dates

• Filing date: Apr 1, 2005
• Grant date: Jan 22, 2008
• Expiry date: Aug 19, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/93

Abstract

A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.