Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor
US7323113B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 3, 2004 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Apr 8, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.