Method for fabricating CMOS image sensor
US7323378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2005 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Jun 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.