Flat-panel detector with avalanche gain
US7323692B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 10, 2005 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Nov 2, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/2928
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
The present invention is an indirect AMFPI wherein a phosphor such as a structured cesium iodide (CsI) is used to convert x-ray energy to optical photons or a charge, which is then detected by a two-dimensional array of either thin-film transistors (TFTs) such as an amorphous a-Se TFTs or a photodiode array. A scanning control circuit generates pulses to turn on the TFTs one row at a time, and thus the charge in the individual arrays is transferred from the TFT to one or more external charge-sensitive amplifiers. The charge-sensitive amplifiers are shared by all the pixels in the same column. The two-dimensional array can be read in real time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.