High-temperature superconductive device

US7323711B2 · kind B2 · utility

Assignees

• FUJITSU LIMITED · JP
• International Superconductivity Technology Center, the Juridical Foundation · JP

Inventors

• Hideo Suzuki
• Masahiro Horibe · Tsukuba, JP
• Keiichi Tanabe · Mito, JP

Key dates

• Filing date: Jul 27, 2004
• Grant date: Jan 29, 2008
• Expiry date: Jul 6, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N60/0941

Abstract

A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.