Recess gate-type semiconductor device and method of manufacturing the same
US7323746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2005 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Sep 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A recess gate-type semiconductor device includes a gate electrode having a recessed portion at least partially covering a recess trench in an active region, and source/drain regions disposed in the active region that are separated by the gate electrode. The recess trench is separated from sidewalls of a device isolation region in a first direction and contacts sidewalls of the device isolation region in a second direction. The width of the recess trench of the active region in the second direction may be greater than the width of the source/drain regions in the second direction, and the recessed portion of the gate electrode may have tabs protruding in the first direction at its corners. Therefore, the semiconductor device has excellent junction leakage current and excellent refresh characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.