Method for producing a TFA image sensor and one such TFA image sensor

US7326589B2 · kind B2 · utility

Assignee

• STMICROELECTRONICS N.V. · NL

Inventors

• Peter Rieve · Windeck, DE
• Konstantin Seibel · Siegen, DE
• Jens Prima · Gehrde, DE
• Markus Scholz · Birkenfeld, DE
• Tarek Lule · Saint-Égrève, FR
• Stephan Benthien · Domène, FR
• Michael Sommer · Gournay-sur-Marne, FR
• Michael Wagner · Nuremberg, DE

Key dates

• Filing date: Nov 11, 2005
• Grant date: Feb 5, 2008
• Expiry date: May 5, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.