Planar image detector

US7326935B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Hagen Klausmann · Germering, DE
• Georg Wittmann · Herzogenaurach, DE

Key dates

• Filing date: Dec 15, 2006
• Grant date: Feb 5, 2008
• Expiry date: Dec 15, 2026

Classification

• Technology area (CPC G): Physics
• CPC primary: G01T1/2006
• WIPO field: Environmental technology
• WIPO sector: Chemistry

Abstract

A planar image detector with a number of photosensor elements arranged like a matrix, the photosensor elements being activated by at least one associated switching element and respectively exhibiting at least one memory element with a predetermined capacity. A predetermined number of phototransistors each have a gate electrode that exhibits at least one gap in a gate metallization thereof and arranged between the source electrode and the drain electrode. The gap produces a space that is reduced in terms of field strength that can be realized simply in terms of production of such planar image detector.