Metamorphic avalanche photodetector
US7326970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | May 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1248
Abstract
A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and responsively produces primary charge carriers, and an avalanche multiplication structure that receives the primary charge carriers from the metamorphic absorption structure and responsively produces secondary charge carriers. An output electrical contact is in electrical communication with the active structure to collect at least some of the secondary charge carriers. A buffer layer lies between the substrate and the active structure, between the active structure and the output electrical contact, or between the metamorphic absorption structure and the avalanche multiplication structure. A lattice parameter of the buffer layer varies with position through a thickness of the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.