Method for depositing a group III-nitride material on a silicon substrate and device therefor
US7327036B2 · kind B2 · utility
16Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2004 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Feb 9, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on the second layer. The present invention further is related to methods of production and to intermediate or template devices highly suitable for the epitaxial growth of a high quality Group III-nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.