Surface acoustic wave device
US7327071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2006 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Sep 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/25
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.