Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product
US7327436B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Aug 23, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03B27/72
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.