Operation of dual-directional electrostatic discharge protection device
US7327541B1 · kind B1 · utility
16Cited by
38References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2004 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Jun 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semiconductor region electrically floats. When the two terminals (A and K) of the ESD protection structure are subjected to an ESD voltage, the structure goes into operation by triggering one of its two inherent thyristors (170 and 180) into a snap-back mode that provides a low impedance path through the structure for discharging the ESD current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.