Method of production of a thin film electroluminescent device and devices produced thereby
US7329165B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2001 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Jul 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of production of a thin film electroluminescent device comprising the steps of: providing a substrate; providing a conductor on the substrate; providing a dielectric layer on the conductor; providing a phosphor layer on the dielectric layer so creating a phosphor/dielectric interface region, the phosphor/dielectric region interface comprising a plurality of electron interface states; and transiently laser annealing the phosphor layer so as to induce an in depth annealing effect to the phosphor layer without heating the phosphor/dielectric region above a temperature which includes a substantial modification in the distribution of electron interface states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.