Etchant composition for indium oxide layer and etching method using the same
US7329365B2 · kind B2 · utility
9Cited by
3References
7Claims
0Family size
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Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Aug 27, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/06
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.