Semiconductor device
US7330234B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2005 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | May 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.