MOSFET temperature sensing
US7332358B2 · kind B2 · utility
9Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Aug 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A MOSFET has its gate voltage controlled to provide a constant drain current of the MOSFET, for example to limit inrush current for charging a capacitance of a power supply arrangement. A decrease in the gate voltage supplied to the MOSFET, corresponding to an increase in the junction temperature of the MOSFET, by more than a determined amount is detected and used to reduce the gate voltage, and hence the drain current, for example to zero, to prevent heating of the MOSFET beyond a maximum operating temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.