Switching device for a pixel electrode and methods for fabricating the same
US7332383B2 · kind B2 · utility
8Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Jan 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.