Passivation of porous semiconductors
US7332441B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Apr 23, 2004 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Jan 25, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S436/823
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.