Rear-illuminated-type photodiode array
US7332751B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Oct 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/107
Abstract
A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.