Metal-insulator-metal (MIM) capacitor and method of fabricating the same
US7332764B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Mar 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a MIM capacitor, and method of fabricating the same, the MIM capacitor includes an interlayer insulating layer on a semiconductor substrate, a lower metal interconnection and a lower metal electrode in the interlayer insulating layer, an intermetal dielectric layer covering the lower metal interconnection, the lower metal electrode, and the interlayer insulating layer, a via hole exposing the lower metal interconnection, an upper metal interconnection groove crossing over the via hole, at least one capacitor trench region exposing the lower metal electrode, an upper metal interconnection filling the upper metal interconnection groove, the upper metal interconnection being electrically connected to the lower metal interconnection through the via hole, a dielectric layer covering inner surfaces of the at least one capacitor trench region, and an upper metal electrode surrounded by the dielectric layer to fill the at least one capacitor trench region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.