Structure for realizing integrated circuit having schottky biode and method of fabricating the same
US7332787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Jul 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/204
Abstract
An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.