Apparatus for controlling flow rate of gases used in semiconductor device by differential pressure
US7334602B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Jun 24, 2004 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Nov 10, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/8326
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Provided is apparatus for controlling flow rate of gases used in semiconductor device by differential pressure by generating differential pressure in a fluid path. A differential pressure generation element generates pressure difference in the fluid path of gases used in semiconductor device fabrication, a pressure, sensor which is installed at a bypass of the fluid path detects the pressure difference, and a central processing unit (CPU) measures and controls a flow rate of the gases, thereby the present invention is capable of controlling the flow rate precisely and rapidly, and enhancing the degree of purity of the gases by the filtering function of the differential pressure generation element itself.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.