Growth of single crystal nanowires
US7335259B2 · kind B2 · utility
26Cited by
4References
108Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2004 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Nov 18, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.