Method for manufacturing a light-emitting diode
US7335519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | May 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a transparent conductive oxide layer are stacked on the substrate in sequence. Next, an etching mask layer is formed on a portion of the transparent conductive oxide layer, in which the etching mask layer is an insulator. Then, a definition step is performed by using the etching mask layer to remove an exposed portion of the transparent conductive oxide layer, and the superlattice contact layer, the second conductivity type cladding layer and the active layer under the exposed portion of the transparent conductive oxide layer until the first conductivity type cladding layer is exposed. The etching mask layer is then removed. Subsequently, a first conductivity type electrode is formed on the exposed portion of the first conductivity type cladding layer, and a second conductivity type electrode is formed on the transparent conductive oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.