Method for making thin-film semiconductor device
US7335539B2 · kind B2 · utility
0Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Aug 16, 2007 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Aug 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.