Method and device for CMOS image sensing with separate source formation

US7335546B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Jianping Yang · San Jose, US
• Chunyan Xin · Shanghai, CN
• Jieguang Huo · Shanghai, CN
• Yanyong Wang · Nanhu, CN

Key dates

• Filing date: Jul 19, 2005
• Grant date: Feb 26, 2008
• Expiry date: Oct 14, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/014

Abstract

A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.