Method for preventing the formation of a void in a bottom anti-reflective coating filling a via hole
US7335585B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 20, 2004 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Nov 23, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/108
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device which, on performing a via first Dual Damascene process, inhibits or prevents the formation of a void in a bottom anti-reflective coating filling a via hole. The method typically includes the steps of forming a bottom anti-reflective coating (BARC) in a via hole in an interlayer dielectric on a semiconductor substrate sufficiently to fill the via hole; disposing an acid diffusion material on the BARC; forming a cross-link layer between the BARC and the acid diffusion material; removing the remaining acid diffusion material; and etching the cross-link layer, the BARC and the interlayer dielectric to form a trench extending from an upper portion of the via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.