Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated thereby
US7335590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Nov 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of fabricating a semiconductor device by selectively forming a diffusion barrier layer, and a semiconductor device fabricated thereby, a conductive pattern and an insulating layer, which covers the conductive pattern, are formed on a semiconductor substrate. The insulating layer is patterned, thereby forming an opening for exposing at least a portion of the conductive pattern. Then, a diffusion barrier layer is formed on the semiconductor substrate having the opening, using a selective deposition technique. The diffusion barrier layer is formed to a thickness that is less on the exposed conductive pattern than the thickness of the diffusion barrier layer on the insulating layer exposed inside the opening. Then, the diffusion barrier layer is etched, thereby forming a recessed diffusion barrier layer. In this manner, metal atoms are prevented from being diffused from a metal plug filling the opening or a metal interconnect to the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.