Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor
US7335910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2006 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | May 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
Abstract
An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.