Radiation-emitting-and-receiving semiconductor chip and method for producing such a semiconductor chip

US7335922B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Glenn-Yves Plaine · Regensburg, DE
• Tony Albrecht · Bad Abbach, DE
• Peter Brick · Regensburg, DE
• Marc Philippens · Regensburg, DE

Key dates

• Filing date: Sep 28, 2004
• Grant date: Feb 26, 2008
• Expiry date: Sep 28, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F55/255

Abstract

A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2). The second semiconductor layer construction (2) has an electromagnetic-radiation-absorbing region (9), the composition of the radiation-generating region (5) being different from that of the radiation-absorbing region (9).