Simulator of lithography tool for correcting focus error and critical dimension, simulation method for correcting focus error and critical dimension, and computer medium for storing computer program for simulator
US7336341B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jan 31, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Jan 14, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A simulator of a lithography tool includes a correcting parameter memory storing a correcting scaling value to correct a focus error of a projection optical system in the lithography tool and a correcting bias to correct a critical dimension error generated in the lithography tool. A model simulation engine simulates an image formation under a corrected focus calculated by multiplying a defocus of the projection optical system by the correcting scaling value to model a calculated critical dimension of an image. A bias corrector adds the correcting bias to the calculated critical dimension to correct the image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.