Highly crystalline aluminum nitride multi-layered substrate and production process thereof
US7338555B2 · kind B2 · utility
4Cited by
5References
3Claims
0Family size
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Key dates
| Filing date | Sep 10, 2004 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Sep 10, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal α-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2 or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.