Method for the passivation of the mirror-faces surfaces of optical semi-conductor elements

US7338821B2 · kind B2 · utility

Assignee

• Forschungsverbund Berlin e.V. · DE

Inventors

• Peter Ressel · Berlin, DE
• Götz Erbert · Löbau, DE

Key dates

• Filing date: May 8, 2003
• Grant date: Mar 4, 2008
• Expiry date: Mar 8, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0282
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent protective layer is applied in-situ, said layer being inert in relation to the material on the mirror-type surface and the remaining components of a natural oxide. In a preferred embodiment, the optical semi-conductor elements is a GaAs-based semi-conductor laser, the reactive and low-energy medium is an atomic hydrogen and the protective layer is made of ZnSe.